View 2SK2275_261716.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2275 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 0.3 4.5 0.2 2.7 0.2
FEATURES
3.2 0.2
* * *
Low On-state Resistance RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2.0 A)
3 0.1 123 4 0.2 12.0 0.2 13.5 MIN. 0.65 0.1
LOW Ciss
Ciss = 1 000 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 900 30 3.5 14 35 2.0 -55 to +150 150 3.5 22 V V A A W W C C A mJ
123 0.7 0.1 2.54 TYP.
15.0 0.3
Total Power Dissipation (TC = 25 C) PT1 Total Power Dissipation (Ta = 25 C) PT2 Storage Temperature Channel Temperature Single Avalanche Current Single Avalanche Energy
*PW 10 s, Duty Cycle 1% **Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
1.3 0.2 1.5 0.2 2.54 TYP.
2.5 0.1
Tstg Tch IAS** EAS**
1. Gate 2. Drain 3. Source
MP-45F (ISOLATED TO-220)
Drain (D)
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Source (S) Body diode Gate (G)
Document No. TC-2510 (O.D. No. TC-8069) Date Published February 1995 P Printed in Japan
(c)
1995
2SK2275
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) yfs IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1 000 170 60 20 20 90 20 42 6.0 20 0.9 480 2.5 2.5 1.0 100 10 MIN. TYP. 2.2 MAX. 2.8 3.5 UNIT V S TEST CONDITIONS VGS = 10 V, ID = 2 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 2 A VDS = 900 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V VDD = 150 V ID = 2 A, RG = 10 RL = 75 VGS = 10 V ID = 3.5 A VDD = 450 V IF = 3.5 A, VGS = 0 1F = 3.5 A di/dt = 50 A/s
A A
pF pF pF ns ns ns ns nC nC nC V ns
C
Test Circuit 1: Avalanche Capability
D.U.T. RG = 25 PG. VGS = 20 0 V 50
Test Circuit 2: Switching Time
D.U.T.
L VDD PG. RG RG = 10
RL
VGS
0 10 % VGS (on) 90 %
VGS Wave VDD Form ID
90 % 90 % ID 0 10 % td (on) ton tr td (off) toff 10 % tf
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
ID Wave Form
Starting Tch
Test Circuit 3: Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2275
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 50
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
80
40
60
30
40
20
20
10
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 6
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V Pulsed
ID - Drain Current - A
10
GS
=1
0
1
RD
S
(o
n)
Lim
it
tV (a ed ID (DC)
Po we rD
10 0
1
10
10
ID - Drain Current - A
ID (pulse) V)
PW
5
=
s
s
4 3 2 1
m s
10
0m s
m
s
iss
ip
at
io
0.1
TC = 25 C Single Pulse 1.0 10
n
Lim
ite
d
100
1 000
0
5
10
15
20
25
VDS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS 10 VDS = 10 V Pulsed ID - Drain Current - A TA = - 25 C
25 C
VDS - Drain to Source Voltage - V
75 C 125 C 1
0.1 0
2
4
6
8
10
12
14
VGS - Gate to Source Voltage - V
3
2SK2275
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth (t) - Transient Thermal Resistance - 100 10 1.0 0.1 0.01 TC = 25 C Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000 Rth (ch-c) = 3.125 (C/W) Rth (ch-a) = 62.5 (C/W)
PW - Pulse Width - s RDS (on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 30 VDS = 20 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 6 Pulsed 5 4 3 2 1
by fs - Forward Transfer Admittance - S
10
3.0 125 C 75 C 25 C Ta = - 25 C
ID = 6 A 3A 1.2 A
1.0
0.3
0.1
1 ID - Drain Current - A
10
20
0
5
10
15
20
25
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5 3.0 2.5 2.0 1.5 1.0 0.5 V DS = 10 V 0 ID = 1mA -50 -25 0
RDS (on) - Drain to Source On-State Resistance -
5 VGS = 10 V Pulsed 4
3
2
1
0
VGS (off) - Gate to Source Cutoff Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
0.1
1
10
100
25
50
75
100 125 150
ID - Drain Current - A
Tch - Channel Temperature - C
4
2SK2275
RDS (on) - Drain to Source On-State Resistance - W DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 8.0 VGS = 10 V 7.0 ID = 3.0 A Pulsed 6.0 5.0 4.0 3.0 2.0 1.0 0 -50 -25 0 25 50 75 100 125 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 20 Pulsed ISD - Diode Forward Current - A 10
1 VGS = 0
0.1 0 0.2 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE f = 1 MHz VGS = 0 Ciss td (on), tr, td (off), tf - Swiching Time - ns
VGS = 10 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 200 100 td (off) tr tf td (on) 10 VGS = 10 V0 RG = 10 VDD = 150 V 10
10 000 Ciss, Coss, Crss - Capacitance - pF
1 000
100 Crss 10 Coss
1
10
100
1 000
3 0.1
1
VDS - Drain to Source Voltage - v
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 600 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 500 400 300 200 100 0 VDS ID = 3.5 A VDD = 450 V 300 V 150 V 10 VGS 8 6 4 2 0 trr - Reverse Recovery Time - ns
REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT 3 000 di/dt = 50 A/ s VGS = 0
1 000
100
0
10
20
30
40
50
30
0.1
1
10
30
Qg - Gate Charge - nC
Diode Forward Current - A
5
2SK2275
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD VDD = 150 V RG = 25 VGS = 20 V0 Starting Tch = 25 C 10 IAS = 3.5 A
EA
S
SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 25 EAS - Single Avalanche Energy - mJ VDD = 150 V RG = 25 VGS = 20 V0 IAS < 3.5 A =
50 IAS - Single Avalanche Current -A
20 22 mJ 15
=2
10
2m
J
1 0.5 100
5
1m
10 m
100 m
0
25
50
75
100
125
150
175
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
2SK2275
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
7
2SK2275
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

▲Up To Search▲

Price & Availability of 2SK2275

	To Download 2SK2275 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .